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Month of October 2004

Showing 41 - 50 of 362 results
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IPCOM000032216D 2004-Oct-26
Disclosed is a method for a BGA package with improved coplanarity. Benefits include improved yield and improved throughput.
IPCOM000032215D 2004-Oct-26
Disclosed is a method for a high performance, thin film thermoelectric cooler (TFTEC) with minimal contact resistances (Rc). Benefits include improved functionality and improved performance.
IPCOM000032214D 2004-Oct-26
Disclosed is a method for laser trimming of etch-resistive material for localized fine-feature patterning. Benefits include improved functionality and improved yield.
IPCOM000032213D 2004-Oct-26
Disclosed is a method for a copper micro-channel or pin grid cooler, which is created by electroforming a copper structure onto a copper disk. Benefits include a solution that is compatible with high-volume manufacturing.
IPCOM000032212D 2004-Oct-26
Disclosed is a method that uses a built-in ATE power supply to relay current measurements from a standalone circuit or external power supply back to the tester. This extends the current measurement capabilities of an existing ATE device under test (DUT), while maintaining compatibility with existing test application...
IPCOM000032211D 2004-Oct-26
Disclosed is a method for photonically induced bottom up chemical vapor deposition (CVD) fill. Benefits include improved functionality, improved performance, and improved design flexibility.
IPCOM000032210D 2004-Oct-26
Disclosed is a method that uses a multi-pedestal chamber to improve the wafer-to-wafer mean film thickness. The disclosed method accomplishes this by scaling a deposition parameter (i.e. pressure, RF power, gas flow, dep time, etc.) as a function of the number of wafers present in the process chamber. Benefits include...
IPCOM000032209D 2004-Oct-26
Disclosed is a method that uses SiO2 nano-particles (i.e. silica) in the spin-on dielectric (SOD) for STI applications. Benefits include reducing anneal temperatures.
IPCOM000032208D 2004-Oct-26
Disclosed is a method that applies radiation treatments (e.g. E-beam, UV, or Plasma) in association with thermal curing methods to convert the spin-on dielectric (SOD) to high quality SiO2 for STI applications. Benefits include reducing annealing temperatures.
IPCOM000032207D 2004-Oct-26
Disclosed is a method for a passive de-gas unit for photo resist, which removes dissolved or micro-entrained/suspended gasses using a contained, pump actuated pressure drop chamber. Benefits include a solution that requires very low maintenance and is relatively inexpensive to manufacture.
Showing 41 - 50 of 362 results
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