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Month of January 2002

Showing 41 - 50 of 393 results
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IPCOM000006744D 2002-Jan-29
As mechanical shock performance expectations increase in personal communication devices, improved methods of shock isolation are needed to satisfy these demands. Existing designs utilize boots or snubbers formed from butyl or silicone to enclose shock sensitive components (i.e.: quartz, ceramic components). This...
IPCOM000006743D 2002-Jan-29
Microcell systems are currently operating in many countries around the globe. With the large amount of base stations distributed around cities, there are times when more than one base station is in range of a user. When the user tries to place a call in an environment where they are in range of more than one base...
IPCOM000006742D 2002-Jan-29
Currently, the holster used with the advisor pager bears a single clip mount (see Figure 1). FIG. 1 FIG. 3 Adding an additional clip mount on the opposite end of the holster gives the user an alternate way of removing his pager from the holster. If the wearer opts to use the reverse clip mount, he removes the pager...
IPCOM000006741D 2002-Jan-29
The current technique of ascertaining microcracks in packages comprises of penetrating dye into the pack- age. The dye is typically fluorescent under UV light. The package is decapped, typically by grinding, mechanic- ally removing or milling off the top or bottom half of the package. The dye traces identify the...
IPCOM000006740D 2002-Jan-28
A classical problem in integrated circuit design is controlling the slew rate of digital output signals. Signals that are too slow result in low operation speeds and signals which are too fast result in such effects as EMI noise and ringing of signals due to transmission line effects. Typical CMOS processes result in...
IPCOM000006739D 2002-Jan-28
In computer operation, a high speed intermediate cache memory enhances computation throughput. For example, on a RISC processor with a small on-chip pri- mary cache, a larger second level off-chip cache may be used. Cache memories may be used similarly with CISC processors. Instructions and data must flow to and from...
IPCOM000006738D 2002-Jan-28
SENSE cur Transistors Ql and Q2 shown in the above sche- matic are the output devices of an operational amplifier that is capable of a large dynamic output voltage swing. The function of the remaining circuitry is to accurately reproduce a fraction (l/N) of the amplier's output cur- rent (Iout) at the SENSE OUT...
IPCOM000006737D 2002-Jan-28
The ability to form variable width and variable depth isolation regions on the same device has been diicult to achieve in high density semiconductor devices. A new method for planatiation and bonding, which is simple to use, ffis variable width and depth trenches, shows excellent planarization, provides excellent RX...
IPCOM000006736D 2002-Jan-28
State-of-the-art RF Power Amplifier Modules used for portable communication transmitter applications use discrete, recessed gate, gallium arsenide (GaAs) MESFET devices for the driver and foal output stages as opposed to the silicon bipolar transistors used just a few years ago. Advantages of discrete recessed gate...
IPCOM000006735D 2002-Jan-28
For high speed bipolar and BiCMOS transistors, parasitic capacitances must be minimized. Base and col- lector side-walls add sign&ant capacitance to substrate. Reducing side-wall capacitances therefore improve tran- sistor speed and performance. In addition, new chip pack- ages require die front side contact to...
Showing 41 - 50 of 393 results
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